Nano Science & Nano Technology: An Indian Journal

Batol Dabaa ¹, F. Srouji ¹, M. Brgol ¹

Affiliations
1 Department of Physics, University of Aleppo, Aleppo, SY

Abstract

Cu₃SbSe₄ is a promising thermoelectric material due to high thermo power. Although it has a simple crystal structure derived from zinc blende structure. The thermoelectric properties of bulk of this semiconductor compounds, prepared by rapid hot press (RHP) technique at 270˚C while Cu₃SbSe₄ thin films were deposited onto glass substrate (microscopic slices) by chemical bath deposition (C.B.D) at (150˚C). Structure characterization was carried out using X-Ray Diffraction spectrum, in order to determine the average crystallite size which found in the range (20-30 nm). The obtained Cu₃SbSe₄ had p-type semiconductor has low resistivity in the range (0.124 Ωm). AFM micrographs of surface of the prepared film are observed that distance in the range (16-65) nm. The carrier density and Hall mobility in Cu₃SbSe₄ bulk were in the range 0.591×1018 Cm^-3 and 117.3 Cm²/Vs. The band gaps of the Cu₃SbSe₄ film are determined from UV-Vis spectrophotometer are found to be within the range (1.25-1.5) eV while the energy band gap of Cu₃SbSe₄ bulk which determined from FT-IR spectrophotometer is (0.362eV) and it corresponds to wavelength (3417 nm). The power factor (PF) of Cu3SbSe4 samples is remarkably improved due to the optimization of whole concentration. Lattice thermal conductivity kL is very low which can be attributed to the strong phonons scattering. As a result, a large thermoelectric figure of merit ZT = 0.35 is obtained for Cu₃SbSe₄ at 490K.

Keywords

Electrical Properties, Thermal Conductivity, XRD, RHP.

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